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Type | Description |
---|---|
Series: | BIMOSFET™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 3000 V |
Current - Collector (Ic) (Max): | 38 A |
Current - Collector Pulsed (Icm): | 120 A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 14A |
Power - Max: | 200 W |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | 62 nC |
Td (on/off) @ 25°C: | 40ns/166ns |
Test Condition: | 960V, 14A, 20Ohm, 15V |
Reverse Recovery Time (trr): | 1.4 µs |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
REVERSE CONDUCTING IGBT