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Type | Description |
---|---|
Series: | POWER MOS 8™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 96 A |
Current - Collector Pulsed (Icm): | 161 A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 32A |
Power - Max: | 416 W |
Switching Energy: | 534µJ (on), 466µJ (off) |
Input Type: | Standard |
Gate Charge: | 158 nC |
Td (on/off) @ 25°C: | 17ns/112ns |
Test Condition: | 400V, 32A, 4.7Ohm, 15V |
Reverse Recovery Time (trr): | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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