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EPC2100ENGRT

EPC2100ENGRT

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Part No :

EPC2100ENGRT

Manufacturer
EPC
Description
GANFET 2 N-CH 30V 9.5A/38A DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2025
DataSheet
EPC2100ENGRT PDF
Availability
0 pieces
Unit Price
$5.18320

Current price of EPC2100ENGRT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

EPC2100ENGRT Specifications
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs:8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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