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BSM600D12P3G001

BSM600D12P3G001

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Part No :

BSM600D12P3G001

Manufacturer
ROHM Semiconductor
Description
1200V, 576A, HALF BRIDGE, FULL S
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Aug 04 - Aug 08 2025
DataSheet
BSM600D12P3G001 PDF
Availability
5 pieces
Unit Price
$1785.00000

Current price of BSM600D12P3G001 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM600D12P3G001 Specifications
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:31000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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