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RM8N650T2

RM8N650T2

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Part No :

RM8N650T2

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 07 - Jul 11 2025
DataSheet
RM8N650T2 PDF
Availability
0 pieces
Unit Price
$0.52000

Current price of RM8N650T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RM8N650T2 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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