SIB452DK-T1-GE3

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Part No :: SIB452DK-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 190V 1.5A PPAK SC75

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: SIB452DK-T1-GE3 PDF

Availability: 418 pieces

Unit Price: ~~$0.82000~~

Current price of SIB452DK-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIB452DK-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	190 V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.5 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	135 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 13W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-75-6L Single
Package / Case:	PowerPAK® SC-75-6L

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